<^.mi-donductoi lpioducti, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 sac series vbr : 5.0 - 50 volts ppk : 500 watts features: * 500w peak pulse surge reverse capability on 10/1000u.s waveform * excellent clamping capability * low incremental surge resistance * fast response time : typically less than 1.0 ns from 0 volts to bv ' pb / rohs free mechanical data * case : do-41 molded plastic * epoxy : ul94v-0 rate flame retardant * lead : axial lead solderable per mil-std-202, i method 208 guaranteed * polarity : color band denotes cathode end * mounting position : any * weight: 0.34 gram low capacitance transient voltage suppressor do-41 -ip? 1.2.74] 6.078 (1.99) 0.034 (0.86] 0.028(0.71) 1.00(25.4) .. min 0.205 (5.20) 0.161(4.10) 1.00(25.4) min dimensions in inches and ( millimeters ) maximum ratings rating at 25 c ambient temperature unless otherwise specified rating peak pulse power dissipation on 10/1000|.is waveform (note 1, figure 1) steady state power dissipation at tl = 75 c lead lengths 0.375", (9.5mm) operating and storage temperature range symbol pppm pd tj, tstg value minimum 500 1.0 -65 to+ 175 unit w w c note: (1) non-repetitive current pulse, per fig. 3 and derated above ta = 25 c per fig. 2 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verilv that datasheets are current before placing orders. quality semi-conductors
electrical characteristics rating at 25 c ambient temperature un breakdown voltage @ type vbr (v) it mm (mfi sac5.0 : 7.6 1c sac6.0 i 7.9 " 1c sac7.0 ' 8.3 t 1.0 sac8.0 8.9 1c sac8.5 i 9.4 ; 1.c sac10 i 111 1.0 SAC12 133 10 sac15 i 16.7 1c sac18 t 200 1.0 sac22 24.4 10 sac26 28.9 1c sac30 ! 333 1.0 sac36 400 1c sac45 50.0 j~ 10 sacso" ' 55.5 10 ess otherwise specified reverse t maximum it stand-off reverse voltage leakage i _i_ @ vrwm \m t ir r^" (v> t" (mat" 5.0 i 300 t 6.0 1 300 *" 7.0 1 300 8.0 100 875 ~50 10 _)_" 5.0 7 12 t 5- 15 5.0 18 5.0 22 5.0 26 5.0 30 5.0 36 , 5.0 ~45 5.0 50 5.0 maximum clamping voltage @ |rsm=5a vrsm ~" "(v7~ 10.0 112 12.6 13.4 14 0 16.3 19 0 23.6 28.8 35.4 42.3 48.6 maximum maximum reverse , junction current capacitance @ 0 volt irsm (a) "pf"" 44 50 41 50 38 50 36 j 50 34 50 29 50 25 j 50 20 ' 50 15 50 14 50 11,1 ' 50 10 50 60.0 8,6 i 50 ? - ? i- - 77.0 i 68 ' 50 88.0 58 50 working inverse blocking voltage vwib ~(\/t 75 75 75 "~"" 75 75 75 75 75 75 75 75 75 ".'.""75 ... 150 150 max. inverse blocking current @ vwib lie ma 10 10 1.0 10 1.0 10 1.0 1.0 10 1.0 t::. 1-0 ..: 1.0 1,0 i. 1.0 ".". 10 peak inverse blocking voltage vpib "(v) 100 100 100 : 100 100 100 100 100 100 100 100 100 100 200 ' 200 fig.1 - peak pulse power rating curve fig.2 - pulse derating curve o 0. o; o q_ 0 his 10ns 10us 100ns 10ms ioms tp, pulse width 25 50 75 10 125 150 175 tl, lead temperature (c) tu o: o: z) o hi en _ i z) n. hi o. fig.3 - pulse waveform tj=25"c ? pulse width (tp) is defined ...as that point where the peak current decays to 50% of irsm 50 ' ~ 2 3 t, time(ms)
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